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Colloidal quantum dot light emitting diodes

United States Patent Application

20050230673
A1
View the Complete Application at the US Patent & Trademark Office
Los Alamos National Laboratory - Visit the Technology Transfer Division Website
The present invention is directed to light emitting devices including a first layer of a semiconductor material from the group of a p-type semiconductor and a n-type semiconductor, a layer of colloidal nanocrystals on the first layer of a semiconductor material, and, a second layer of a semiconductor material from the group of a p-type semiconductor and a n-type semiconductor on the layer of colloidal nanocrystals.
Mueller, Alexander H. (Santa Fe, NM), Hoffbauer, Mark A. (Los Alamos, NM), Klimov, Victor I. (Los Alamos, NM)
11/ 089,726
March 25, 2005
[0002] This invention was made with government support under Contract No. W-7405-ENG-36 awarded by the U.S. Department of Energy. The government has certain rights in the invention.