Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.
GOVERNMENT LICENSE RIGHTS
 This invention was made with government support under Contract DE-SC0006168 awarded by the U.S. Department of Energy. The government has certain rights in the invention.