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QUANTUM DOT AND NANOWIRE SYNTHESIS

United States Patent Application

20140027710
A1
View the Complete Application at the US Patent & Trademark Office
A self-assembled semiconductor nanostructure includes a core and a shell, wherein one of the core or the shell is rich in a strained component and the other of the core or the shell is rich in an unstrained component, wherein the nanostructure is a quantum dot or a nanowire. A method includes growing a semiconductor alloy structure on a substrate using a growth mode that produces a semiconductor alloy structure having a self-assembled core and shell and allowing the structure to equilibrate such that one of the core or the shell is strained and the other is unstrained. Another method includes growing at least one semiconductor alloy nanostructures on a substrate, wherein the nanostructure comprises a strained component and an unstrained component, and controlling a compositional profile during said growing such that a transition between the strained component and an unstrained component is substantially continuous.
Liu, Feng (Salt Lake City, UT), Stringfellow, Gerald (Salt Lake City, UT), Niu, Xiaobin (Salt Lake City, UT)
UNIVERSITY OF UTAH RESEARCH FOUNDATION (Salt Lake City UT)
13/ 991,134
December 3, 2011
REFERENCE TO GOVERNMENT RIGHTS [0001] This invention was made with government support under grant number DE-FG02-04ER46148 awarded by the U.S. Department of Energy. The US government has certain rights in this invention.