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USING A CARBON VACANCY REDUCTION MATERIAL TO INCREASE AVERAGE CARRIER LIFETIME IN A SILICON CARBIDE SEMICONDUCTOR DEVICE

United States Patent Application

20140070230
A1
View the Complete Application at the US Patent & Trademark Office
A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.
O'Loughlin, Michael John (Chapel Hill, NC), Cheng, Lin (Chapel Hill, NC), Burk, JR., Albert Augustus (Chapel Hill, NC), Agarwal, Anant Kumar (Chapel Hill, NC)
CREE, INC. (Durham NC)
13/ 610,993
September 12, 2012
[0001] This invention was made with government funds under Contract No. DE-FOA-0000288 awarded by the Advanced Research Projects Agency-Energy (ARPA-E). The U.S. Government has certain rights in this invention.