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USING AMORPHOUS ZINC-TIN OXIDE ALLOYS IN THE EMITTER STRUCTURE OF CIGS PV DEVICES

United States Patent Application

20140020744
A1
View the Complete Application at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
A device includes a back contact, an absorber layer coupled to the back contact, a buffer layer coupled to the absorber layer; and an amorphous transparent conductive layer coupled to the buffer layer, wherein the amorphous transparent conductive phase is characterized by, as a function of composition, i) a range of band gaps and ii) a range of work functions.
Hersh, Peter (Denver, CO), van Hest, Maikel (Denver, CO), Ginley, David (Evergreen, CO), Perkins, John (Boulder, CO), Bollinger, Vincent (Arvada, CO)
13/ 733,784
January 3, 2013
STATEMENT AS TO RIGHTS MADE UNDER FEDERALLY-SPONSORED RESEARCH OR DEVELOPMENT [0002] The United States Government has rights in this invention under Contract No. DE-AC36-08GO28308 between the United States Department of Energy and the Alliance for Sustainable Energy, LLC, the Manager and Operator of the National Renewable Energy Laboratory. This invention was made under a CRADA # CRD-03-121 between HelioVolt Corporation and the National Renewable Energy Laboratory operated for the United States Department of Energy.