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MORPHOLOGICAL AND SPATIAL CONTROL OF InP CRYSTAL GROWTH USING CLOSED-SPACED SUBLIMATION

United States Patent Application

20140069499
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A new solar cell comprising a substrate, a VIB metal thin film deposited on the substrate, and a polycrystalline III-V semiconductor thin film deposited on the VIB metal thin film. A method of making a solar cell comprising providing a substrate, depositing a VIB metal thin film on the substrate, and depositing a polycrystalline III-V semiconductor thin film on the VIB metal thin film. In one embodiment, a polycrystalline III-V semiconductor thin film comprising Indium Phosphide (InP) is deposited on a VIB metal thin film comprising Molybdenum (Mo) by Metal Organic Chemical Vapor Deposition (MOCVD). In another embodiment, growth of Indium phosphide (InP) crystals directly on metal foils is described using a method comprising a closed-spaced sublimation (CSS). In another embodiment, both InP nanowires and polycrystalline films were obtained by tuning growth conditions. In another embodiment, utilizing a silicon dioxide mask, selective nucleation of InP on metal substrates was obtained.
Kiriya, Daisuke (Berkeley, CA), Zheng, Maxwell (Berkeley, CA), Javey, Ali (Lafayette, CA)
The Regents of the University of California (Oakland CA)
14/ 014,000
August 29, 2013
STATEMENT OF GOVERNMENTAL SUPPORT [0002] The invention described and claimed herein was made in part utilizing funds supplied by the U.S. Department of Energy under Contract No. DE-ACO2-05CH11231 between the U.S. Department of Energy and the Regents of the University of California for the management and operation of the Lawrence Berkeley National Laboratory. The government has certain rights in this invention.