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CARBON DOPING OF GALLIUM ARSENIDE VIA HYDRIDE VAPOR PHASE EPITAXY

United States Patent Application

20130337636
A1
View the Complete Application at the US Patent & Trademark Office
Methods for growing layers of carbon doped GaAs are provided. Methods include exposing a substrate to a gas mixture comprising a source of Ga, a source of As and a dopant comprising a haloalkane under conditions sufficient to grow a layer of carbon doped GaAs on the substrate via hydride vapor phase epitaxy. The haloalkane can include a bromoalkane, a bromochloroalkane, an iodoalkane or combinations thereof. The concentration of carbon in the layer can be 1.times.10.sup.15 cm.sup.-3 or greater.
Kuech, Thomas (Madison, WI), Schulte, Kevin (Madison, WI)
13/ 523,134
June 14, 2012
REFERENCE TO GOVERNMENT RIGHTS [0001] This invention was made with government support under XEJ-0-99047-01 awarded by the Department of Energy. The government has certain rights in the invention.