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High Bandgap III-V Alloys for High Efficiency Optoelectronics

United States Patent Application

View the Complete Application at the US Patent & Trademark Office
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High bandgap alloys for high efficiency optoelectronics are disclosed. An exemplary optoelectronic device may include a substrate, at least one Al.sub.1-xIn.sub.xP layer, and a step-grade buffer between the substrate and at least one Al.sub.1-xIn.sub.xP layer. The buffer may begin with a layer that is substantially lattice matched to GaAs, and may then incrementally increase the lattice constant in each sequential layer until a predetermined lattice constant of Al.sub.1-xIn.sub.xP is reached.
Alberi, Kirstin (Denver, CO), Mascarenhas, Angelo (Lakewood, CO), Wanlass, Mark (Golden, CO)
Alliance for Substainable Energy, LLC (Golden CO)
13/ 878,738
October 12, 2011
Contractual Origin [0002] The United States Government has rights in this invention under Contract No. DE-AC36-08G028308 between the United States Department of Energy and the Alliance for Sustainable Energy, LLC, the Manager and Operator of the National Renewable Energy Laboratory.