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METHODS FOR ENHANCING P-TYPE DOPING IN III-V SEMICONDUCTOR FILMS

United States Patent Application

20130203243
A1
View the Complete Application at the US Patent & Trademark Office
Methods of doping a semiconductor film are provided. The methods comprise epitaxially growing the III-V semiconductor film in the presence of a dopant, a surfactant capable of acting as an electron reservoir, and hydrogen, under conditions that promote the formation of a III-V semiconductor film doped with the p-type dopant. In some embodiments of the methods, the epitaxial growth of the doped III-V semiconductor film is initiated at a first hydrogen partial pressure which is increased to a second hydrogen partial pressure during the epitaxial growth process.
Liu, Feng (Salt Lake City, UT), Stringfellow, Gerald (Salt Lake City, UT), Zhu, Junyi (Lakewood, CO)
THE UNIVERSITY OF UTAH (Salt Lake City UT)
13/ 322,403
October 28, 2011
REFERENCE TO GOVERNMENT RIGHTS [0002] This invention was made with government support under grant number DE-FG02-04ER46148 awarded by the U.S. Department of Energy. The US government has certain rights in this invention.