A method for separating a III-nitride layer from a substrate. This is done by fabricating a detachment porous region between the III-nitride layer and the substrate through etching. The porous region allows for easy detachment of the III-nitride layer from the substrate. Active layers for electronic and optoelectronic devices can then be grown on the III-nitride layer.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH AND DEVELOPMENT
 This invention was made with U.S. Government support under Grant No. DE-SC0001009 awarded by the Department of Energy. The U.S. Government has certain rights in this invention.