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METHOD FOR PRODUCING GALLIUM NITRIDE SUBSTRATES FOR ELECTRONIC AND OPTOELECTRONIC DEVICES

United States Patent Application

20130207237
A1
View the Complete Application at the US Patent & Trademark Office
A method for separating a III-nitride layer from a substrate. This is done by fabricating a detachment porous region between the III-nitride layer and the substrate through etching. The porous region allows for easy detachment of the III-nitride layer from the substrate. Active layers for electronic and optoelectronic devices can then be grown on the III-nitride layer.
Weisbuch, Claude C.A. (Paris, FR), Speck, James S. (Goleta, CA)
The Regents of The University of California (Oakland CA)
13/ 879,183
October 17, 2011
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH AND DEVELOPMENT [0004] This invention was made with U.S. Government support under Grant No. DE-SC0001009 awarded by the Department of Energy. The U.S. Government has certain rights in this invention.