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PEROVSKITE TO BROWNMILLERITE COMPLEX OXIDE CRYSTAL STRUCTURE TRANSFORMATION INDUCED BY OXYGEN DEFICIENT GETTER LAYER

United States Patent Application

20130216800
A1
View the Complete Application at the US Patent & Trademark Office
A method for forming a heterostructure includes forming a first perovskite crystal structure complex oxide material layer over a substrate to a first thickness. A second perovskite crystal structure oxygen deficient complex oxide oxygen getter material layer is formed upon the first perovskite crystal structure complex oxide material layer. When the second perovskite crystal structure oxygen deficient complex oxide oxygen getter material layer reaches a critical thickness that may approximate one-half to one times the first thickness, the first perovskite crystal structure complex oxide material layer spontaneously transforms into a first brownmillerite crystal structure complex oxide material layer, with an attendant transfer of substantially one-half oxygen atom per perovskite unit cell to the second perovskite crystal structure oxygen deficient complex oxide oxygen getter material layer, thus forming a second perovskite crystal structure oxygen enriched complex oxide oxygen getter material layer. A particular heterostructure derives from the foregoing methodology.
Brock, Joel D. (Ithaca, NY), Muller, David A. (Ithaca, NY), Fitting Kourkoutis, Lena (Ithaca, NY), Woll, Arthur R. (Ithaca, NY), Ferguson, John (Ithaca, NY)
13/ 522,997
January 19, 2011
STATEMENT OF GOVERNMENT INTEREST [0002] The research that lead to this invention was funded by the U.S. Government under: (1) Project ID DMR-0317729 to the Cornell Center for Materials Research; and (2) Project ID DMR-0225180 to the Cornell High Energy Synchrotron Source. The U.S. Government has rights in this invention.