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METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A MELT

United States Patent Application

20130213296
A1
View the Complete Application at the US Patent & Trademark Office
A method of horizontal ribbon growth from a melt includes forming a leading edge of the ribbon using radiative cooling on a surface of the melt, drawing the ribbon in a first direction along the surface of the melt, and removing heat radiated from the melt in a region adjacent the leading edge of the ribbon at a heat removal rate that is greater than a heat flow through the melt into the ribbon.
Kellerman, Peter L. (Essex, MA), Sun, Dawei (Nashua, NH), Mackintosh, Brian H. (Concord, MA)
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. (Gloucester MA)
13/ 398,874
February 17, 2012
STATEMENT AS TO FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0001] The U.S. Government has a paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided for by the terms of contract number DE-EE0000595 awarded by the U.S. Department of Energy.