Skip to Content
Find More Like This
Return to Search

METHOD FOR ACHIEVING SUSTAINED ANISOTROPIC CRYSTAL GROWTH ON THE SURFACE OF A SILICON MELT

United States Patent Application

20130213295
A1
View the Complete Application at the US Patent & Trademark Office
An apparatus for growing a crystalline sheet from a melt includes a cold block assembly. The cold block assembly may include a cold block and a shield surrounding the cold block and being at an elevated temperature with respect to that of the cold block, the shield defining an opening disposed along a surface of the cold block proximate a melt surface that defines a cold area comprising a width along a first direction of the cold block, the cold area operable to provide localized cooling of a region of the melt surface proximate the cold block. The apparatus may further include a crystal puller arranged to draw a crystalline seed in a direction perpendicular to the first direction when the cold block assembly is disposed proximate the melt surface.
Mackintosh, Brian H. (Concord, MA), Kellerman, Peter L. (Essex, MA), Sun, Dawei (Nashua, NH)
VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. (Gloucester MA)
13/ 398,884
February 17, 2012
STATEMENT AS TO FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0001] The U.S. Government has a paid-up license in this invention and the right in limited circumstances to require the patent owner to license others on reasonable terms as provided for by the terms of contract number DE-EE0000595 awarded by the U.S. Department of Energy.