Skip to Content
Find More Like This
Return to Search

ATMOSPHERIC-PRESSURE PLASMA-ENHANCED CHEMICAL VAPOR DEPOSITION

United States Patent Application

20130181331
A1
View the Complete Application at the US Patent & Trademark Office
Provided are silicon-containing films with a refractive index suitable for antireflection, articles having a surface comprising the films, and atmospheric-pressure plasma-enhanced chemical vapor deposition (AE-PECVD) processes for the formation of surface films and coatings. The processes generally include providing a substrate, providing a precursor comprising silicon, and reacting the precursor with a gas comprising nitrogen (N2) in a low-temperature plasma at atmospheric pressure, wherein the products of the reacting form a film on the substrate. An antireflection coating made by the process can have a refractive index of about 1.5 to about 2.2. Articles are provided having a surface that includes the antireflection coating.
Srinivasan, Guruvenket (Fargo, ND), Sailer, Robert (West Fargo, ND)
NDSU RESEARCH FOUNDATION (Fargo ND)
13/ 876,225
September 28, 2011
FEDERALLY-SPONSORED RESEARCH AND DEVELOPMENT [0002] Activities relating to the development of the subject matter of this invention were funded at least in part by the U.S. Government, Department of Energy Grant Nos. DOE-PV-DS-43500 and DE-FC36-08G088160. The United States Government has certain rights in this invention.