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SELECTIVE DRY ETCHING OF N-FACE (Al,In,Ga)N HETEROSTRUCTURES

United States Patent Application

20130099277
A1
View the Complete Application at the US Patent & Trademark Office
A method of selective dry etching of N-face (Al,In,Ga)N heterostructures through the incorporation of an etch-stop layer into the structure, and a controlled, highly selective, etch process. Specifically, the method includes: (1) the incorporation of an easily formed, compatible etch-stop layer in the growth of the device structure, (2) the use of a laser-lift off or similar process to decouple the active layer from the original growth substrate, and (3) the achievement of etch selectivity higher than 14:1 on N-face (Al,In,Ga)N.
Speck, James S. (Goleta, CA), Hu, Evelyn L. (Cambridge, MA), Weisbuch, Claude C.A. (Paris, FR), Choi, Yong Seok (Goleta, CA), Koblmuller, Gregor (Santa Barbara, CA), Iza, Michael (Goleta, CA), Hurni, Christophe (Goleta, CA)
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (Oakland CA)
13/ 660,782
October 25, 2012
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH AND DEVELOPMENT [0002] This invention was made with Government support under Grant No. DE-FC26-06NT42857 awarded by the U.S. Department of Energy. The Government has certain rights in this invention.