A method of selective dry etching of N-face (Al,In,Ga)N heterostructures through the incorporation of an etch-stop layer into the structure, and a controlled, highly selective, etch process. Specifically, the method includes: (1) the incorporation of an easily formed, compatible etch-stop layer in the growth of the device structure, (2) the use of a laser-lift off or similar process to decouple the active layer from the original growth substrate, and (3) the achievement of etch selectivity higher than 14:1 on N-face (Al,In,Ga)N.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH AND DEVELOPMENT
 This invention was made with Government support under Grant No. DE-FC26-06NT42857 awarded by the U.S. Department of Energy. The Government has certain rights in this invention.