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COMPOSITIONALLY GRADED DILUTE GROUP III-V NITRIDE CELL WITH BLOCKING LAYERS FOR MULTIJUNCTION SOLAR CELL

United States Patent Application

20130074901
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A dilute Group III-V nitride solar cell is provided for use in a multijunction solar cell having a p-n junction formed by p-type and n-type layers of dilute Group III-V nitride material, such as GaNAs. Blocking layers of a group III-V ternary alloy are formed on opposing surfaces of the p-n junction to improve the electron and hole collection efficiency of the p-n junction by preventing the flow of electrons and holes, respectively, into the adjacent layers of the multijunction solar cell in certain directions. The III-V nitride solar cell is current matched to other solar cells of the multijunction solar cell. The III-V nitride solar cell may possess a bandgap of approximately 1.0 eV to serve as one junction of the multijunction solar cell. The p-type and n-type layers may further have compositionally graded nitrogen concentrations to provide an electric field for more efficient charge collection.
WALUKIEWICZ, Wladyslaw (Kensington, CA), YU, Kin Man (Lafeyette, CA)
ROSESTREET LABS ENERGY, INC. (Phoenix AZ)
13/ 623,520
September 20, 2012
STATEMENT OF GOVERNMENTAL INTEREST [0002] The invention described and claimed herein was made in part utilizing funds supplied by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The government has certain rights in this invention.