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PHOTOELECTROCHEMICAL CELL INCLUDING Ga(Sbx)N1-x SEMICONDUCTOR ELECTRODE

United States Patent Application

*** PATENT GRANTED ***
20130081940
9,755,023
A1
View the Complete Application at the US Patent & Trademark Office
The composition of matter comprising Ga(Sb.sub.x)N.sub.1-x where x=0.01 to 0.06 is characterized by a band gap between 2.4 and 1.7 eV. A semiconductor device includes a semiconductor layer of that composition. A photoelectric cell includes that semiconductor device.
Menon, Madhu (Lexington, KY), Sheetz, Michael (Lexington, KY), Sunkara, Mahendra Kumar (Louisville, KY), Pendyala, Chandrashekhar (Chandler, AZ), Sunkara, Swathi (Louisville, KY), Jasinski, Jacek B. (Louisville, KY)
The University Of Louisville Research Foundation, Inc. (Louisville KY), The University of Kentucky Research Foundation (Lexington KY)
13/ 630,875
September 28, 2012
[0002] This invention was made with government support under contract no. DE-FG02-07ER46375 awarded by U.S. Department of Energy. The government has certain rights in the invention.