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BAND STRUCTURE ENGINEERING FOR IMPROVED EFFICIENCY OF CDTE BASED PHOTOVOLTAICS

United States Patent Application

20130074912
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
Disclosed is a solar cell or component thereof that includes a p-type thin film solar light absorbing layer having one or more compositions of group II-VI alloys described as CdTe.sub.xM.sub.1-x, where M is S, Se or O. An n-type thin-film transparent window layer comprising CdS is provided adjacent to the CdTe.sub.xM.sub.i-x p-type thin film solar light absorbing layer such that a p-n junction formed between the layers.
Walukiewicz, Wladyslaw (Kensington, CA), Reichertz, Lothar A. (Berkeley, CA)
ROSESTREET LABS, LLC (Phoenix AZ)
13/ 625,592
September 24, 2012
STATEMENT OF GOVERNMENTAL INTEREST [0002] The invention described and claimed herein was made in part utilizing funds supplied by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The government has certain rights in this invention.