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United States Patent Application

View the Complete Application at the US Patent & Trademark Office
Sequential Infiltration Synthesis Advances Lithography (IN-10-017, 10-106)
A plasma etch resist material modified by an inorganic protective component via sequential infiltration synthesis (SIS) and methods of preparing the modified resist material. The modified resist material is characterized by an improved resistance to a plasma etching or related process relative to the unmodified resist material, thereby allowing formation of patterned features into a substrate material, which may be high-aspect ratio features. The SIS process forms the protective component within the bulk resist material through a plurality of alternating exposures to gas phase precursors which infiltrate the resist material. The plasma etch resist material may be initially patterned using photolithography, electron-beam lithography or a block copolymer self-assembly process.
Darling, Seth B. (Chicago, IL), Elam, Jeffrey W. (Elmhurst, IL), Tseng, Yu-Chih (Oakville, CA), Peng, Qing (Raleigh, NC)
UChicago Argonne LLC
13/ 427,619
March 22, 2012
STATEMENT OF GOVERNMENT INTEREST [0002] The United States Government has rights in this invention pursuant to Contract No. DE-AC02-06CH11357 between the United States Government and the UChicago Argonne, LLC, representing Argonne National Laboratory.