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HOT WIRE CHEMICAL VAPOR DEPOSTION (HWCVD) WITH CARBIDE FILAMENTS

United States Patent Application

20120315405
A1
View the Complete Application at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
A hot wire chemical vapor deposition apparatus for use in depositing thin films such as amorphous or epitaxial silicon upon a surface of a wafer or substrate by cracking a source or precursor gas such as silane. The apparatus includes a vacuum chamber and a source of precursor gas operable to inject the precursor gas into the chamber. The HWCVD apparatus also includes a heater with a support surface exposed to the deposition chamber, and the heater is operable to heat a substrate positioned upon the support surface. The apparatus includes a catalytic decomposition assembly with a filament positioned between the heater and the precursor gas inlet for selectively passing a current through the filament to resistively heat material of the filament. The filament material may be carbide such as tantalum carbide, which may be coated on a graphite core.
Landry, Marc (Golden, CO), Martin, Ina (Garfield Heights, OH), Shub, Maxim (Golden, CO), Teplin, Charles (Golden, CO), Mariner, John (Avon Lake, OH), Portugal, James (Irvine, CA)
ALLIANCE FOR SUSTAINABLE ENERGY, LLC (Golden CO)
13/ 580,595
February 25, 2011
CONTRACTUAL ORIGIN [0002] The United States Government has rights in this invention under Contract No. DE-AC36-08GO28308 between the United States Department of Energy and the Alliance for Sustainable Energy, LLC, the Manager and Operator of the National Renewable Energy Laboratory.