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COPPER INDIUM GALLIUM SELENIDE (CIGS) THIN FILMS WITH COMPOSITION CONTROLLED BY CO-SPUTTERING

United States Patent Application

20110067757
A1
View the Complete Application at the US Patent & Trademark Office
Sputtered Thin Film Photovoltaics
A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.
Frantz, Jesse A. (Landover, MD), Sanghera, Jasbinder S. (Ashburn, VA), Bekele, Robel Y. (Washington, DC), Nguyen, Vinh Q. (Fairfax, VA), Aggarwal, Ishwar D. (Fairfax Station, VA), Bruce, Allan J. (Scotch Plains, NJ), Cyrus, Michael (Summit, NJ), Frolov, Sergey V. (New Providence, NJ)
12/ 884,524
September 17, 2010