Crystal silicon processes and products (100) are disclosed. In any exemplary embodiment, a biaxially textured metal substrate (110) was fabricated by the Rolling-Assisted Biaxially Textured Substrate (RABiTS) process. Electron beam evaporation was used to grow buffer layers (120) heteroepitaxially on the metal substrate (110) as a buffer layer (120). After growth of the buffer layer (120), a silicon layer was grown using hot wire chemical vapor deposition (HWCVD). The silicon film had the same grain size as the underlying metal substrate (110). In addition, the orientation of these grains matched the orientations of the underlying metal substrate (110).
 The United States Government has rights in this invention under Contract No. DE-AC36-08G028308 between the United States Department of Energy and the Alliance for Sustainable Energy, LLC, the Manager and Operator of the National Renewable Energy Laboratory.