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Ferroic materials having domain walls and related devices

United States Patent Application

20110308580
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
Ferroic materials and methods for diverse applications including nanoscale memory, logic and photovoltaic devices are described. In one aspect, ferroic thin films including insulating domains separated by conducting domain walls are provided, with both the insulating domains and conducting domain walls intrinsic to the ferroic thin films. The walls are on the order of about 2 nm wide, providing virtually two dimensional conducting sheets through the insulating material. Also provided are methods of writing, reading, erasing and manipulating conducting domain walls. According to various embodiments, logic and memory devices having conducting domain walls as nanoscale features are provided. In another aspect, ferroic thin films having photovoltaic activity are provided. According to various embodiments, photovoltaic and optoelectronic devices are provided.
Seidel, Jan (Oakland, CA), Ramesh, Ramamoorthy (Moraga, CA), Martin, Lane (Champaign, IL), Yang, Seung-Yeul (Albany, CA)
The Regents of the University of California (Oakland CA)
12/ 930,507
January 7, 2011
STATEMENT OF GOVERNMENT SUPPORT [0002] This invention was made with government support under Contract No. DE-AC02-05CH11231 awarded by the U.S. Department of Energy. The government has certain rights in the invention.