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METHODS USING SURFACTANTS TO CONTROL UNINTENTIONAL DOPANT IN SEMICONDUCTORS

United States Patent Application

20110215275
A1
View the Complete Application at the US Patent & Trademark Office
The use of surfactants that do not themselves act as dopants and are isoelectronic with either the group III or group V host atoms during OMVPE growth significantly reduces the incorporation of background impurities such as carbon, oxygen, sulfur and/or silicon. For example, the use of the surfactants Sb or Bi significantly reduces the incorporation of background impurities such as carbon, oxygen, sulfur and/or silicon during the OMVPE growth of III/V semiconductor materials, for example GaAs, GaInP, and GaP layers. As a result, an effective method for controlling the incorporation of impurity atoms is adding a minute amount of surfactant during OMVPE growth.
Stringfellow, Gerald B. (Salt Lake City, UT), Howard, Alexander D. (Salt Lake City, UT), Chapman, David C. (Stow, MA)
The University of Utah Research Foundation (Salt Lake City UT)
11/ 951,120
December 5, 2007
[0002] This technology has Federal funding under the Department of Energy Grant No. DEFG0293ER45485.