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Suspended Thin Film Structures

United States Patent Application

20110200787
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
Disclosed is a method of preparing a support structure suitable for use, e.g., in microscopic studies, comprising a free standing atomically thin film (e.g. graphene) suspended across an opening in the support structure. The method in one aspect comprises the steps of preparing a thin film which is an atomically thin film (e.g., graphene) on a surface of a solid substrate to form a graphene-layered substrate; attaching the graphene layer to a hole-containing support mesh; removing the solid support, thereby transferring the graphene layer from the substrate to the carbonaceous hole-containing layer on the support mesh; and then removing contaminants to obtain said structure. In another aspect, the present method does not involve a transfer, but comprises a lithography and etching process in which the atomically thin layer is applied to a support which is marked with a lithographic pattern and selectively etched, leaving the free standing film.
Regan, William R. (Berkeley, CA), Zettl, Alexander (Kensington, CA), Aleman, Benjamin J. (Berkeley, CA)
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (Oakland CA)
13/ 013,645
January 25, 2011
STATEMENT OF GOVERNMENTAL SUPPORT [0004] This invention was made with U.S. Government support under U.S. Department of Energy Contract Number DE-AC02-05CH11231. The Government has certain rights in this invention.