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PROCESS FOR FABRICATING III-NITRIDE BASED NANOPYRAMID LEDS DIRECTLY ON A METALIZED SILICON SUBSTRATE

United States Patent Application

20110079766
A1
View the Complete Application at the US Patent & Trademark Office
A nanopyramid LED and method for forming. The nanopyramid LED includes a silicon substrate, a III-nitride layer deposited thereon, a metal layer deposited thereon; and a nanopyramid LED grown in ohmic contact with the metal layer. The nanopyramid LED can be seeded on the III-nitride layer or metal layer. The metal layer can be a reflecting surface for the nanopyramid LED. The method for forming nanopyramid LEDs includes obtaining a silicon substrate, depositing a III-nitride layer thereon, depositing a metal layer thereon, depositing a dielectric growth layer thereon, etching a dielectric growth template in the growth layer, and growing III-nitride nanopyramid LEDs through the dielectric growth template in ohmic contact with the metal layer. The etching can be performed by focused ion beam etching. The etching can stop in the metal layer or III-nitride layer, so that the nanopyramid LEDs can seed off the metal layer or III-nitride layer, respectively.
Wildeson, Isaac Harshman (West Lafayette, IN), Sands, Timothy David (West Lafayette, IN)
12/ 896,073
October 1, 2010
GOVERNMENTAL SUPPORT INFORMATION [0002] This invention was made with government support from the U.S. Department of Energy under grant/contract number DE-FC26-06NT42862; and from the U.S. Department of Defense under a NDSEG Fellowship. The Government has certain rights in the invention.