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OPTOELECTRONIC DEVICES HAVING A DIRECT-BAND-GAP BASE AND AN INDIRECT-BAND-GAP EMITTER

United States Patent Application

20110073887
A1
View the Complete Application at the US Patent & Trademark Office
National Renewable Energy Laboratory - Visit the NREL Technology Transfer Website
Optoelectronic devices, junctions and methods of fabricating a device or junction where the emitter layer is of an indirect-band-gap material and the base layer is of a direct-band-gap material. The device or junction may have, among other structures and layers, a base layer of a first semiconductor material having a first conductivity type and further having a direct band gap and an emitter layer forming a junction with the base layer. In this embodiment, the emitter layer may be of a second semiconductor material having a second conductivity type and further having an indirect band gap. The optoelectronic device may have the semiconductor material of the emitter layer substantially lattice mismatched with the semiconductor material of the base layer in bulk form. Alternatively, the emitter layer may be substantially lattice matched with the base layer.
WANLASS, MARK W. (Golden, CO), Mascarenhas, Angelo (Lakewood, CO)
ALLIANCE FOR SUSTAINABLE ENERGY, LLC (Golden CO)
12/ 566,769
September 25, 2009
CONTRACTUAL ORIGIN [0001] The United States Government has rights in this invention under Contract No. DE-AC36-08GO28308 between the United States Department of Energy and the Alliance for Sustainable Energy, LLC, the manager and operator of the National Renewable Energy Laboratory.