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Method for forming a strained semiconductor substrate

United States Patent Application

20040224469
A1
View the Complete Application at the US Patent & Trademark Office
A method of manufacturing a strained semiconductor substrate includes the steps of provide a Si substrate and depositing a strained Si.sub.1-xGe.sub.x layer on the Si substrate. The Si substrate and strained Si.sub.1-xGe.sub.x layer are subjected to rapid thermal annealing which forms a relaxed Si.sub.1-xGe.sub.x layer on the Si substrate. The method further includes the steps of depositing a buffer Si.sub.1-xGe.sub.x layer on the relaxed Si.sub.1-xGe.sub.x layer, and depositing Si on the buffer Si.sub.1-xGe.sub.x layer. The buffer Si.sub.1-xGe.sub.x layer causes the deposited Si to form a strained Si layer on the buffer Si.sub.1-xGe.sub.x layer with the combined layers forming the strained semiconductor substrate.
Lim, Chong Wee (Urbana, IL), Foo, Yong-Lim (Urbana, IL), Hong, Sukwon (Urbana, IL), Bratland, Kenneth A. (Mahomet, IL), Spila, Timothy (Savoy, IL), Cho, Benjamin (Morris, IL), Ohmori, Kenji (Urbana, IL), Greene, Joseph (Champaign, IL)
The Board of Trustees of the University of Illinois
10/ 434,402
May 8, 2003
[0001] This invention was made with United States government assistance through the U.S. Department of Energy Grant No. DEFG02-91ER45439. The government has certain rights in this invention.