The present disclosure relates to photosensitive optoelectronic devices comprising at least one of an electron blocking or hole blocking layer. Further disclosed are methods of increasing power conversion efficiency in photosensitive optoelectronic devices using at least one of an electron blocking or hole blocking layer. The electron blocking and hole blocking layers presently disclosed may reduce electron leakage current by reducing the dark current components of photovoltaic cells. This work demonstrates the importance of reducing dark current to improve power conversion efficiency of photovoltaic cells.
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH
 This invention was made with U.S. Government support under FA9550-07-1-0364 awarded by the U.S. Air Force Office of Scientific Research, and DE-FG36-08GO18022 awarded by the U.S. Department of Energy. The government has certain rights in the invention.