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FRONT AND BACKSIDE PROCESSED THIN FILM ELECTRONIC DEVICES

United States Patent Application

*** PATENT GRANTED ***
20100327355
8,089,073
A1
View the Complete Application at the US Patent & Trademark Office
This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.
Yuan, Hao-Chih (Lakewood, CO), Wang, Guogong (Madison, WI), Eriksson, Mark A. (Madison, WI), Evans, Paul G. (Madison, WI), Lagally, Max G. (Madison, WI), Ma, Zhenqiang (Middleton, WI)
Wisconsin Alumni Research Foundation
12/ 877,269
September 8, 2010
STATEMENT OF GOVERNMENT RIGHTS [0002] Research funding was provided for this invention by the U.S. Army under grant number W911NF-041-1-0389; U.S. Department of Energy under grant number DE-FG02-03ER46028; and the National Science Foundation under grant number 0079983. The United States government has certain rights in this invention.