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HIGHLY DOPED LAYER FOR TUNNEL JUNCTIONS IN SOLAR CELLS

United States Patent Application

20100229930
A1
View the Complete Application at the US Patent & Trademark Office
A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.
Fetzer, Christopher M. (Valencia, CA)
THE BOEING COMPANY (Chicago IL)
12/ 404,795
March 16, 2009
U.S. GOVERNMENT RIGHTS [0001] This invention was made with Government support under DE-FC36-07G017052 awarded by the Department of Energy. The Government has certain rights in this invention.