Skip to Content
Find More Like This
Return to Search

SPUTTER DEPOSITION METHOD AND SYSTEM FOR FABRICATING THIN FILM CAPACITORS WITH OPTICALLY TRANSPARENT SMOOTH SURFACE METAL OXIDE STANDOFF LAYER

United States Patent Application

20100200393
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
A sputter deposition method and system for producing a metal oxide film, especially a dielectric standoff layer of a thin film/nanolayer capacitor. A noble gas, such as argon, is used to sputter metal ions from a metal target, such as niobium, in the presence of a partial pressure of oxygen in a vacuum chamber. And an oxygen-to-noble gas flow ratio entering the vacuum chamber is controlled by a flow controller to be within an operating range defined between a predetermined lower limit (such as 30% O.sub.2/Ar for niobium oxide) associated with a minimum transparency/stoichiometric threshold and a predetermined upper limit (such as 80% O.sub.2/Ar for niobium oxide) associated with a maximum roughness/porosity threshold, so that a reaction between the sputtered metal ions and the oxygen produces a substantially transparent metal oxide film with a substantially smooth non-porous surface.
Chow, Robert (Livermore, CA), Ellis, Alan (Livermore, CA)
12/ 703,113
February 9, 2010
FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] The United States Government has rights in this invention pursuant to Contract No. DE-AC52-07NA27344 between the United States Department of Energy and Lawrence Livermore National Security, LLC for the operation of Lawrence Livermore National Laboratory.