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Atomic layer deposition for high temperature superconductor material synthesis

United States Patent Application

20040178175
A1
View the Complete Application at the US Patent & Trademark Office
Argonne National Laboratory - Visit the Technology Development and Commercialization Website
An improved device and process for atomic layer deposition (ALD) is provided. A more rapid deposition of layers is accomplished by a continuous flow of reactant moieties. The first moiety, carried by an inert carrier gas, is deposited as a monolayer. The flow is then switched to the second moiety, also carried by an inert gas, which is deposited as a monolayer and which reacts with the first moiety thereby forming a product moiety monolayer. The process is repeated with continual switching of flow between the two different reactant moieties. This allows for the deposition of many layers of the product moiety Any unreacted moiety molecules and unadsorbed product moiety molecules are swept out by the carrier gas. The capability exists to use more than three reactant moieties and thus form complex materials.
Pellin, Michael J. (Naperville, IL), Hryn, John N. (Naperville, IL), Elam, Jeffrey W. (Downers Grove, IL)
10/ 799,181
March 12, 2004
[0002] The United States Government has rights in this invention pursuant to contract number W-31-109-ENG-38 between the U.S. Department of Energy and the University of Chicago representing Argonne National Laboratory.