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VHF ENERGIZED PLASMA DEPOSITION PROCESS FOR THE PREPARATION OF THIN FILM MATERIALS

United States Patent Application

20100116334
A1
View the Complete Application at the US Patent & Trademark Office
A VHF energized plasma deposition process wherein a process gas is decomposed in a plasma so as to deposit the thin film material onto a substrate, is carried out at process gas pressures which are in the range of 0.5-2.0 torr, with substrate temperatures that do not exceed 300.degree. C., and substrate-cathode spacings in the range of 10-50 millimeters. Deposition rates are at least 5 angstroms per second. The present method provides for the high speed deposition of semiconductor materials having a quality at least equivalent to materials produced at a much lower deposition rate.
Xu, Xixiang (Rochester Hills, MI), Beglau, David Alan (Oxford, MI), Yue, Guozhen (Troy, MI), Yan, Baojie (Rochester Hills, MI), Li, Yang (Troy, MI), Jones, Scott (Romeo, MI), Guha, Subhendu (Bloomfield Hills, MI), Yang, Chi (Troy, MI)
United Solar Ovonic LLC (Auburn Hills MI)
12/ 267,048
November 7, 2008
STATEMENT OF GOVERNMENT INTEREST [0001] This invention was made, at least in part, under U.S. Government, Department of Energy, Contact No. DE-FC36-07G017053. The Government may have rights in this invention.