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LOW RESISTANCE TUNNEL JUNCTIONS FOR HIGH EFFICIENCY TANDEN SOLAR CELLS

United States Patent Application

20100095998
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Berkeley National Laboratory - Visit the Technology Transfer and Intellectual Property Management Department Website
A semiconductor structure comprises a first photovoltaic cell comprising a first material, and a second photovoltaic cell comprising a second material and connected in series to the first photovoltaic cell. The conduction band edge of the first material adjacent the second material is at most 0.1 eV higher than a valence band edge of the second material adjacent the material. Preferably, the first material of the first photovoltaic cell comprises ln]..chi.Al.chi.N or lnt_yGayN and the second material of the second photovoltaic cell comprises silicon or germanium. Alternatively, the first material of the first photovoltaic cell comprises InAs or InAsSb and the second material of the second photovoltaic cell comprises GaSb or GaAsSb.
Walukiewicz, Wladyslaw (Kensington, CA), Ager, III, Joel W. (Berkeley, CA), Yu, Kin Man (Lafayette, CA)
The Regents of the University of California (Oakland CA)
12/ 528,394
April 9, 2008
STATEMENT OF GOVERNMENTAL SUPPORT [0001] The invention described and claimed herein was made in part utilizing funds supplied by the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. The government has certain rights in this invention.