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DUAL CHAMBER SYSTEM PROVIDING SIMULTANEOUS ETCH AND DEPOSITION ON OPPOSING SUBSTRATE SIDES FOR GROWING LOW DEFECT DENSITY EPITAXIAL LAYERS

United States Patent Application

*** PATENT GRANTED ***
20100013052
7,902,047
A1
View the Complete Application at the US Patent & Trademark Office
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A dual-chamber reactor can include a housing enclosing a volume having a divider therein, where the divider defines a first chamber and a second chamber. The divider can include a substrate holder that supports at least one substrate and exposes a first side of the substrate to the first chamber and a second side of the substrate to the second chamber. The first chamber can include an inlet for delivering at least one reagent to the first chamber for forming a film on the first side of the substrate, and the second chamber can include a removal device for removing material from the second side of the substrate.
Kulkarni, Nagraj S. (Knoxville, TN), Kasica, Richard J. (Ashburn, VA)
12/ 180,280
July 25, 2008
STATEMENT REGARDING FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT [0002] The United States Government has rights in this invention pursuant to Contract No. DE-AC05-00OR22725 between the United States Department of Energy and UT-Battelle, LLC.