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Semiconductor devices in compensated semiconductor

United States Patent Application

View the Complete Application at the US Patent & Trademark Office
Semiconductor devices formed in fully or partially compensated semiconductor, (substrate or epi-layer), including minimal current flow voltage switching devices with at least one junction which is rectifying when the semiconductor is caused to be N or P-type by the presence of applied gate voltage field induced carriers, such as inverting and non-inverting gate voltage channel induced semiconductor single devices with operating characteristics similar to conventional multiple device CMOS systems.
Welch, James D. (Omaha, NE)
10/ 603,334
June 26, 2003
[0002] The invention in this application was conceived and developed in part under support provided by a grant from the Energy Related Inventions Program of the United States Federal Department of Energy, Contract No. DE-FG47-93R701314. The United States Government has certain rights in this invention.