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Refractory bilayer resist materials for lithography using highly attenuated radiation

United States Patent Application

20010004510
A1
View the Complete Application at the US Patent & Trademark Office
Sandia National Laboratories - Visit the Intellectual Property Management and Licensing Website
Novel silicon-containing polymer compounds, based on cyclic olefins. These polymer compounds can be used as photoresist materials and because they are transparent to radiation in the spectral range from 193 to 13 nm, which is highly energetic and strongly attenuated, are particularly advantageous as refractory bilayer photoresist materials for semiconductor wafer patterning processes that employ deep ultraviolet (DUV) and extreme ultraviolet (EUV) radiation.
Wheeler, David R. (Albuquerque, MN)
09/ 741,450
December 19, 2000
[0001] This invention was made with Government support under contract no. DE-AC04-94AL85000 awarded by the U.S. Department of Energy to Sandia Corporation. The Government has certain rights in the invention.