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Atmospheric pressure plasma processing reactor

United States Patent Application

20030213561
A1
View the Complete Application at the US Patent & Trademark Office
Los Alamos National Laboratory - Visit the Technology Transfer Division Website
An atmospheric pressure plasma etching reactor, in one embodiment, has a table holding a wafer to be processed and which moves the wafer to be processed under at least one electrode that is mounted in close proximity to the table and defines an entry of a gas mixture, and in another embodiment, has interleaved radio frequency powered electrodes and grounded electrodes. Electrodes may have grooves having preselected widths to enhance the plasma for treatment of the wafers. With a radio-frequency voltage connected between the electrodes, and a gas mixture between the electrode and the wafer, a plasma is created between the electrode and the wafer to be processed, resulting in surface treatment, film removal or ashing of the wafer.
Selwyn, Gary S. (Los Alamos, NM), Henins, Ivars (Los Alamos, NM), Snyder, Hans (Los Alamos, NM), Herrmann, Hans W. (Los Alamos, NM)
10/ 208,124
July 29, 2002
[0002] This invention was made with Government support under Contract No. W-7405-ENG-36 awarded by the U.S. Department of Energy. The Government has certain rights in the invention.