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Ion-assisted deposition techniques for the planarization of topological defects

United States Patent Application

20030164998
A1
View the Complete Application at the US Patent & Trademark Office
Lawrence Livermore National Laboratory - Visit the Industrial Partnerships Office Website
An ion-assisted deposition technique to provide planarization of topological defects, e.g., to mitigate the effects of small particle contaminants on reticles for extreme ultraviolet (EUV) lithography. Reticles for EUV lithography will be fabricated by depositing high EUV reflectance Mo/Si multilayer films on superpolished substrates and topological substrate defects can nucleate unacceptable ("critical") defects in the reflective Mo/Si coatings. A secondary ion source is used to etch the Si layers in between etch steps to produce topological defects with heights that are harmless to the lithographic process.
Mirkarimi, Paul B. (Sunol, CA), Spiller, Eberhard A. (Livermore, CA), Stearns, Daniel G. (Los Altos, CA)
The Regents of the University of California
10/ 086,614
March 1, 2002
[0001] The United States Government has rights in this invention pursuant to Contract No. W-7405-ENG-48 between the United States Department of Energy and the University of California for the operation of Lawrence Livermore National Laboratory.